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APT20GN60B |
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| Part Number | APT20GN60B |
| Manufacturer | Advanced Power Technology |
| Description | TYPICAL PERFORMANCE CURVES ® APT20GN60B APT20GN60BG* APT20GN60B(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT... |
| Features |
specified.
APT20GN60B(G) UNIT Volts
600 ±30 40 24 60 60A @ 600V 136 -55 to 175 300
Amps
@ TC = 175°C
Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts °C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 290µA, Tj = 25°C) MIN TYP MAX Units
600 5.0 1.1 5.8 1.5 1.7 25
2
6.5 1.9
Collector-Emitter On Voltage (VGE =... |
| Document |
 APT20GN60B Data Sheet
PDF 419.67KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | APT20GN60B |
Microsemi Corporation |
Thunderbolt High Speed NPT IGBT |
|
| 2 | APT20GN60BDQ1 |
Advanced Power Technology |
IGBT |
|
| 3 | APT20GN60BDQ1 |
Microsemi Corporation |
High Speed PT IGBT |
|
| 4 | APT20GN60BDQ1G |
Advanced Power Technology |
IGBT |
|
| 5 | APT20GN60BDQ1G |
Microsemi Corporation |
High Speed PT IGBT |
|