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2SC4368 |
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| Part Number | 2SC4368 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage : VCEO= 150V(Min) ·Complement to Type 2SA1657 ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI... |
| Features |
T
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
150
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.5
V
10 μA
10 μA
hFE
DC Current Gain
IC= 500mA; VCE= 10V
40
140
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
35
pF
fT
Current-Gain—Bandwidth Product
IC= 500m A; VCE= 10V
4
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is... |
| Document |
 2SC4368 Data Sheet
PDF 183.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC4361 |
Sanyo Semiconductor |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC4363 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC4364 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 4 | 2SC4365 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 5 | 2SC4366 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|