IXFN320N17T2 IXYS GigaMOS TrenchT2 HiperFET Power MOSFET Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

IXFN320N17T2

IXYS
IXFN320N17T2
IXFN320N17T2 IXFN320N17T2
zoom Click to view a larger image
Part Number IXFN320N17T2
Manufacturer IXYS
Description Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN320N17T2 RDS(on) ≤ ≤ trr VDSS ID25...
Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20V, VDS = 0V...

Document Datasheet IXFN320N17T2 Data Sheet
PDF 202.70KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 IXFN32N100P
IXYS Corporation
Polar Power MOSFET HiPerFET Datasheet
2 IXFN32N120
IXYS Corporation
HiPerFET Power MOSFETs Datasheet
3 IXFN32N120P
IXYS Corporation
Polar HiPerFET Power MOSFET Datasheet
4 IXFN32N60
IXYS
HiPerFET Power MOSFET Datasheet
5 IXFN32N80P
IXYS Corporation
PolarHV HiPerFET Power MOSFET Datasheet
More datasheet from IXYS



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact