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BLF7G22LS-130 |
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| Part Number | BLF7G22LS-130 |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB pr... |
| Features |
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency ... |
| Document |
 BLF7G22LS-130 Data Sheet
PDF 193.78KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLF7G22LS-200 |
Ampleon |
Power LDMOS transistor |
|
| 2 | BLF7G22LS-250P |
Ampleon |
Power LDMOS transistor |
|
| 3 | BLF7G22LS-250P |
NXP |
Power LDMOS transistor |
|
| 4 | BLF7G22L-200 |
Ampleon |
Power LDMOS transistor |
|
| 5 | BLF7G22L-250P |
Ampleon |
Power LDMOS transistor |
|