BLF6G27-135 |
Part Number | BLF6G27-135 |
Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
Description | 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test ... |
Features |
I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 32 V and an IDq of 1200 mA: N Average output power = 20 W N Power gain = 16 dB N Drain efficiency = 22.5 % N ACPR885k = −52.0 dBc in 30 kHz bandwidth I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2500 MHz to 2700 MHz) I... |
Document |
BLF6G27-135 Data Sheet
PDF 123.08KB |
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