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BLF6G27-10G |
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| Part Number | BLF6G27-10G |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. ... |
| Features |
I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thickness on leads I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)... |
| Document |
 BLF6G27-10G Data Sheet
PDF 141.76KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLF6G27-10 |
Ampleon |
Power LDMOS transistor |
|
| 2 | BLF6G27-10 |
NXP Semiconductors |
WiMAX power LDMOS transistor |
|
| 3 | BLF6G27-10G |
Ampleon |
Power LDMOS transistor |
|
| 4 | BLF6G27-135 |
NXP Semiconductors |
WiMAX power LDMOS transistor |
|
| 5 | BLF6G27-45 |
NXP Semiconductors |
WiMAX power LDMOS transistor |
|