Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
SSI4N60B |
Click to view a larger image
| Part Number | SSI4N60B |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
| Features |
• • • • • • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSW4N60B / SSI4N60B 600 4.0 2.5 16 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W... |
| Document |
 SSI4N60B Data Sheet
PDF 668.85KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSI10N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 2 | SSI122 |
Silicon Systems |
4-Channel Thin Film Read/Write Device |
|
| 3 | SSI1N50B |
Fairchild Semiconductor |
520V N-Channel MOSFET |
|
| 4 | SSI1N60A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 5 | SSI1N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|