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K6F4016R4G |
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| Part Number | K6F4016R4G |
| Manufacturer | SAMSUNG Electronics |
| Description | Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00 The K6F4016R4G fami... |
| Features |
• • • • • • CMOS SRAM www.DataSheet4U.com 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00 The K6F4016R4G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up opera... |
| Document |
 K6F4016R4G Data Sheet
PDF 151.44KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6F4016R4E |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 2 | K6F4016R4E-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 3 | K6F4016R4G-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 4 | K6F4016U4G |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 5 | K6F4016U4G-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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