V40100C |
Part Number | V40100C |
Manufacturer | Vishay (https://www.vishay.com/) Siliconix |
Description | www.vishay.com V40100C, VI40100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V40100C 3 2 1 ... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 20 A 100 V 250 A VF at IF = 20 A 0.61 V TJ max. Package 150 °C TO-220AB, TO-262AA Diode variatio... |
Document |
V40100C Data Sheet
PDF 136.87KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | V40100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
2 | V40100G |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V40100G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
4 | V40100K |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | V40100P |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |