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IS45S16100C1 |
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| Part Number | IS45S16100C1 |
| Manufacturer | Integrated Silicon Solution |
| Description | ISSI’s 16Mb Synchronous DRAM IS45S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture.... |
| Features |
• Clock frequency: 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 4096 refresh cycles every 64 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge comm... |
| Document |
 IS45S16100C1 Data Sheet
PDF 893.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS45S16100E |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM |
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| 2 | IS45S16100F |
ISSI |
512K Words x 16 Bits x 2 Banks 16Mb SDRAM |
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| 3 | IS45S16100H |
ISSI |
16Mb SYNCHRONOUS DYNAMIC RAM |
|
| 4 | IS45S16160C |
Integrated Silicon Solution |
256 Mb Single Data Rate Synchronous DRAM |
|
| 5 | IS45S16160D |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM |
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