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AP6679GS |
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| Part Number | AP6679GS |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. GD S TO-263(S) The TO-263 packa... |
| Features |
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 1.4 40 62
Unit ℃/W ℃/W ℃/W
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1 200812304
www.DataSheet4U.com
AP6679GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Stat... |
| Document |
 AP6679GS Data Sheet
PDF 223.87KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AP6679GH |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP6679GH-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP6679GI |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP6679GI-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP6679GJ |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|