IS42VS16100C1 |
Part Number | IS42VS16100C1 |
Manufacturer | Integrated Silicon Solution |
Description | ISSI’s 16Mb Synchronous DRAM IS42VS16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture... |
Features |
• Clock frequency: 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 1.8V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 2048 refresh cycles every 32 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge comm... |
Document |
IS42VS16100C1 Data Sheet
PDF 837.26KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IS42VS16100D |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM | |
2 | IS42VS16100E |
ISSI |
16Mb SYNCHRONOUS DYNAMIC RAM | |
3 | IS42VS16100F |
ISSI |
512K Words x 16 Bits x 2 Banks 16Mb SDRAM | |
4 | IS42VS16160D |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM | |
5 | IS42VS16160J |
ISSI |
256Mb Synchronous DRAM |