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TC59LM914AMG-37 |
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| Part Number | TC59LM914AMG-37 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM914/06AMG is Fast Cycle Random Access Memory (Network FCRAMTM) containing 536,870,912 memory cells. TC59LM914AMG is organized... |
| Features |
PARAMETER CL = 3 tCK Clock Cycle Time (min) CL = 4 CL = 5 tRC Random Read/Write Cycle Time (min) tRAC Random Access Time (max) IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max) lDD6 Self-Refresh Current (max) TC59LM914/06 -37 5.5 ns 4.5 ns 3.75 ns 22.5 ns 22.0 ns 280 mA 90 mA 20 mA -50 6.0 ns 5.5 ns 5.0 ns 27.5 ns 24.0 ns 240 mA 80 mA 20 mA
• • • • • • • • • • • • • • • • Fully Synchronous Operation • Double Data Rate (DDR) Data input/output are synchronized with both edges of DQS. • Differential Clock (CLK and CLK ) inputs CS , FN and all address input signals a... |
| Document |
 TC59LM914AMG-37 Data Sheet
PDF 770.12KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TC59LM914AMG-50 |
Toshiba Semiconductor |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
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| 2 | TC59LM913AMB |
Toshiba Semiconductor |
(TC59LM905AMB / TC59LM913AMB) Network FCRAM |
|
| 3 | TC59LM905AMB |
Toshiba Semiconductor |
(TC59LM905AMB / TC59LM913AMB) Network FCRAM |
|
| 4 | TC59LM906AMG-37 |
Toshiba Semiconductor |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
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| 5 | TC59LM906AMG-50 |
Toshiba Semiconductor |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
|