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IRFC9110 |
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| Part Number | IRFC9110 |
| Manufacturer | Intersil Corporation |
| Description | IRFD9110 www.DataSheet4U.com Data Sheet July 1999 File Number 2215.3 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an ... |
| Features |
• 0.7A, 100V • rDS(ON) = 1.200Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9110 PACKAGE HEXDIP BRAND IRFD9110 G S NOTE: When ordering, use the entire part number. Packaging HEXDIP DRAIN GATE SOURCE 4-39 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD9110 Absolute Maximum Ratings TC = 25... |
| Document |
 IRFC9110 Data Sheet
PDF 83.03KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFC9110 |
IRF |
P-Channel Power MOSFET |
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| 2 | IRFC150 |
IXYS Corporation |
High Voltage Power MOSFET |
|
| 3 | IRFC240 |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRFC250 |
IXYS Corporation |
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series |
|
| 5 | IRFC2907B |
International Rectifier |
HEXFET Power MOSFET |
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