PBSS5160DS |
Part Number | PBSS5160DS |
Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
Description | PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS. 1.2 Features I I I I I Low c... |
Features |
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I Dual low power switches (e.g. motors, fans) I Automotive applications
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1] [2]
Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC ... |
Document |
PBSS5160DS Data Sheet
PDF 171.25KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | PBSS5160K |
NXP Semiconductors |
60V 1A PNP low VCEsat (BISS) transistor | |
2 | PBSS5160K |
NXP Semiconductors |
60V 1A PNP low VCEsat (BISS) transistor | |
3 | PBSS5160PAP |
NXP |
PNP/PNP low VCEsat (BISS) transistor | |
4 | PBSS5160PAP |
nexperia |
1A PNP/PNP low VCEsat (BISS) transistor | |
5 | PBSS5160PAPS |
nexperia |
PNP/PNP Transistor |