PBSS5160DS NXP Semiconductors 60V 1A PNP/PNP low VCEsat (BISS) transistor Datasheet, en stock, prix

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PBSS5160DS

NXP Semiconductors
PBSS5160DS
PBSS5160DS PBSS5160DS
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Part Number PBSS5160DS
Manufacturer NXP (https://www.nxp.com/) Semiconductors
Description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS. 1.2 Features I I I I I Low c...
Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I Dual low power switches (e.g. motors, fans) I Automotive applications 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC ...

Document Datasheet PBSS5160DS Data Sheet
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