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CMBD7000N3 |
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| Part Number | CMBD7000N3 |
| Manufacturer | Cystech Electonics |
| Description | The CMBD7000N3 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package. Equivalent Circuit CMBD7000N... |
| Features |
lectronics Corp.
Spec. No. : C329N3 Issued Date : 2006.12.05 Revised Date : 2010.10.21 Page No. : 2/6
Electrical Characteristics @ Tj=25℃ unless otherwise specified
Parameters Reverse breakdown voltage Forward voltage
Reverse current Diode capacitance Reverse recovery time
Symbol
Conditions
Min Typ. Max Unit
V(BR) I(BR)=100μA
100 -
-V
IF=1mA VF IF=10mA
IF=100mA
VR=50V IR VR=100V
VR=50V, Tj=125℃
0.55 0.7 V 0.67 - 0.82 V 0.75 1.1 V
1.0 μA - - 3.0 μA
100 μA
Cd VR=0V, f=1MHz
- - 1.5 pF
when switched from IF=10mA to trr IR=10mA, RL=100Ω, measured - - 4 ns
at IR=1mA
Thermal Characteri... |
| Document |
 CMBD7000N3 Data Sheet
PDF 242.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CMBD1201 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|
| 2 | CMBD1201 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|
| 3 | CMBD1202 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|
| 4 | CMBD1202 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|
| 5 | CMBD1203 |
Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
|