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BLD6G21LS-50 |
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| Part Number | BLD6G21LS-50 |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applicati... |
| Features |
I Typical TD-SCDMA performance at frequencies from 2010 MHz to 2025 MHz: N Average output power = 8 W N Power gain = 13.5 dB N Efficiency = 42 % I Fully optimized integrated Doherty concept: N integrated asymmetrical power splitter at input N integrated power combiner N peak biasing down to 0 V N low junction temperature N high efficiency I Integrated ESD protection
NXP Semiconductors
BLD6G21L-50; BLD6G21LS-50
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
I I I I I
Good pair match (main and peak on the same chip) Independent control of main and peak bias Internally matche... |
| Document |
 BLD6G21LS-50 Data Sheet
PDF 162.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLD6G21L-50 |
NXP Semiconductors |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
|
| 2 | BLD6G22L-50 |
NXP Semiconductors |
W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor |
|
| 3 | BLD6G22L-50 |
Ampleon |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
|
| 4 | BLD6G22LS-50 |
NXP Semiconductors |
W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor |
|
| 5 | BLD6G22LS-50 |
Ampleon |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
|