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IPB80N08S2-07 |
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| Part Number | IPB80N08S2-07 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263... |
| Features |
• N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 • Ultra low Rds(on) • 100% Avalanche tested IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 Product Summary V DS R DS(on),max (SMD version) ID 75 V 7.1 mΩ 80 A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N08S2-07 IPP80N08S2-07 IPI80N08S2-07 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code Marking SP0002-19048 2N0807 SP0002-19040 2N0807 SP0002-19043 2N0807 Maximum ratings, at T j=25 °C, unless otherwise specified Para... |
| Document |
 IPB80N08S2-07 Data Sheet
PDF 160.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB80N08S2L-07 |
Infineon Technologies |
Power-Transistor |
|
| 2 | IPB80N08S4-06 |
Infineon |
Power-Transistor |
|
| 3 | IPB80N03S4L-02 |
Infineon |
Power-Transistor |
|
| 4 | IPB80N03S4L-03 |
Infineon |
Power-Transistor |
|
| 5 | IPB80N04S2-04 |
Infineon Technologies |
Power-Transistor |
|