Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MSAGX75F60A |
Click to view a larger image
| Part Number | MSAGX75F60A |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg θJC MAX. 600 600 +/-20 +/-30 75 50 200 100 300 -55 to +150 -55... |
| Features |
• • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAGX75F60B high frequency IGBT, low switching losses Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg θJC MAX. 600 600 +/-20 +/-30 75 50 200 100 300 -55 to +150 -55 to +150 0.25 UNIT Volts Volts Volts V... |
| Document |
 MSAGX75F60A Data Sheet
PDF 66.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MSAGX75L60A |
Microsemi Corporation |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | MSAGX60F60A |
Microsemi Corporation |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | MSAGA11F120D |
Microsemi Corporation |
Fast IGBT Die |
|
| 4 | MSAGZ52F120A |
Microsemi Corporation |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | MSA-0100 |
Hewlett-Packard |
Cascadable Silicon Bipolar MMIC Amplifier |
|