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MSAGA11F120D |
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| Part Number | MSAGA11F120D |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | • • • N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. • Collector/... |
| Features |
• • • • • Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated • Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix 35-50% of ICM Max 10µs 4000 µs MAXIMUM RATINGS: SYMBOL VCES VCGR VEG VGE IC1 IC2 ICM ICM1 ICM2 ICsurge2 EAS PD TJ, TSTG Time - µ sec PARAMETER Collector-Emitter Voltage Collector-Gate Voltage (RGE = 20KΩ ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25° C Continuous Collector Current @ TC = 110° C Surge Current (10µs x 4ms... |
| Document |
 MSAGA11F120D Data Sheet
PDF 184.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MSAGX60F60A |
Microsemi Corporation |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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| 2 | MSAGX75F60A |
Microsemi Corporation |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | MSAGX75L60A |
Microsemi Corporation |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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| 4 | MSAGZ52F120A |
Microsemi Corporation |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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| 5 | MSA-0100 |
Hewlett-Packard |
Cascadable Silicon Bipolar MMIC Amplifier |
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