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BLF6G10S-45 |
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| Part Number | BLF6G10S-45 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production t... |
| Features |
I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA: N Average output power = 1.0 W N Gain = 23 dB N Efficiency = 8 % N ACPR = −48.5 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
www.DataSheet4U.com
NXP Semiconductors
BLF6G10S-45
Power LDMOS transistor
1.3 Applica... |
| Document |
 BLF6G10S-45 Data Sheet
PDF 120.99KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | BLF6G10-200RN |
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| 2 | BLF6G10-45 |
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| 4 | BLF6G10LS-135R |
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| 5 | BLF6G10LS-200 |
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