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BLF6G10LS-200 |
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| Part Number | BLF6G10LS-200 |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test c... |
| Features |
I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efficiency = 27 % N ACPR = −41 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
www.DataSheet4U.com
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
1.3 ... |
| Document |
 BLF6G10LS-200 Data Sheet
PDF 137.34KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLF6G10LS-200R |
NXP Semiconductors |
Power LDMOS transistor |
|
| 2 | BLF6G10LS-200RN |
Ampleon |
Power LDMOS transistor |
|
| 3 | BLF6G10LS-135R |
NXP Semiconductors |
Power LDMOS transistor |
|
| 4 | BLF6G10L-40BRN |
NXP Semiconductors |
Power LDMOS transistor |
|
| 5 | BLF6G10-200RN |
Ampleon |
Power LDMOS transistor |
|