CY7C1427BV18 Cypress Semiconductor (CY7C14xxBV18) 36-Mbit DDR-II SRAM 2-Word Burst Architecture Datasheet, en stock, prix

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CY7C1427BV18

Cypress Semiconductor
CY7C1427BV18
CY7C1427BV18 CY7C1427BV18
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Part Number CY7C1427BV18
Manufacturer Cypress Semiconductor
Description The CY7C1416BV18, CY7C1427BV18, CY7C1418BV18, and CY7C1420BV18 are 1.8V Synchronous Pipelined SRAM equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peri...
Features




■ Functional Description The CY7C1416BV18, CY7C1427BV18, CY7C1418BV18, and CY7C1420BV18 are 1.8V Synchronous Pipelined SRAM equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 8-...

Document Datasheet CY7C1427BV18 Data Sheet
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