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2SC3026 |
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| Part Number | 2SC3026 |
| Manufacturer | SavantIC |
| Description | ·With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC3026 Fig... |
| Features |
tter saturation voltage Collector cut-off current CONDITIONS IC=10mA ;RBE=9 IE=10mA; IC=0 IC=5A; IB=1.25A IC=5A; IB=1.25A VCE=1700V; RBE=9 MIN 800 6
2SC3026
SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICES
TYP.
MAX
UNIT V V
2.0 1.5 0.5
V V mA
Switching times ts tf Storage time IC=5A; IB1=1A;IB2=-2.5A Fall time 0.5 µs 4.0 µs
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3026
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
... |
| Document |
 2SC3026 Data Sheet
PDF 143.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3020 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 2 | 2SC3021 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 3 | 2SC3022 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 4 | 2SC3022 |
HGSemi |
HG RF POWER TRANSISTOR |
|
| 5 | 2SC3025 |
INCHANGE |
NPN Transistor |
|