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IXFK48N60P |
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| Part Number | IXFK48N60P |
| Manufacturer | IXYS Corporation |
| Description | TM www.DataSheet4U.com HiPerFET PolarHV Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr = = ≤ ≤ 600 V 48 A 135mΩ 200 ns ... |
| Features |
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Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 25 1000 135 V V nA µA µA mΩ
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International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
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Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights res... |
| Document |
 IXFK48N60P Data Sheet
PDF 254.24KB |
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