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Features
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0V, ID = 250µA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 60 -55 1.0 -1.0 1.5 -1.5 2.5 -2.5 ±100 ±100 V MIN TYP MAX UNIT
nA
1
AUG-17-2004
NIKO-SEM
www.DataSheet4U.com
N- & P-Channel Enhancement Mode Field Effect Transistor
P5506NVG
SOP-8 Lead-Free
VDS = 48V, VGS = 0V VDS = -44V, VGS = 0V Zero Gate Voltage Drain Current IDSS
N-Ch P-Ch
1 -1 µA 10 -10
VDS = 40V, VGS = 0V, TJ = 55 °C N-Ch VDS = -36V, ...
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P5506NVG Data Sheet
