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Features
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= 250µA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V, TJ = 55 °C 60 1.0 1.5 2.5 ±100 1 10 µA V nA MIN TYP MAX UNIT
1
AUG-19-2004
NIKO-SEM
www.DataSheet4U.com
Dual N-Channel Enhancement Mode Field Effect Transistor
P5506HVG
SOP-8 Lead-Free
On-State Drain Current1 Drain-Source Resistance1 On-State
ID(ON)
VDS = 5V, VGS = 10V VGS = 4.5V, ID = 4A
20 55 42 14 75 55
A m S
RDS(ON) gfs
VGS = 10V, ID = 4.5A VDS = 10V, ID = 4.5A
Forward Transconductance1
DYNAMIC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate...
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P5506HVG Data Sheet
