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SPU02N60 |
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| Part Number | SPU02N60 |
| Manufacturer | Siemens Semiconductor |
| Description | Preliminary data SPD02N60 SPU02N60 SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated www.DataSheet4U.com Pin 1 G Pin 2 D Pin 3 S Type SPD02N60 SPU02N60 VDS ID 600 V 2... |
| Features |
case
www.DataSheet4U.com
Symbol min.
Values typ. max. 2.25 100 50 tbd -
Unit
RthJC RthJA RthJA
-
K/W
Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1)
Static Characteristics Drain- source breakdown voltage
V(BR)DSS VGS(th) I DSS
600 2.1
3
4
V
VGS = 0 V, I D = 0.25 mA
Gate threshold voltage, VGS = VDS I D = 1 mA Zero gate voltage drain current
µA 0.1 10 4.2 1 100 100 5.5 nA Ω
VDS = 600 V, VGS = 0 V, T j = 25 °C VDS = 600 V, VGS = 0 V, T j = 150 °C
Gate-source leakage current
I GSS RDS(on)
-
VGS = 20 V, VDS = 0 V
Drain-... |
| Document |
 SPU02N60 Data Sheet
PDF 123.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPU02N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPU02N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | SPU02N60S5 |
Infineon Technologies |
Power Transistor |
|
| 4 | SPU02N60S5 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPU01N60C3 |
Infineon |
Cool MOS Power Transistor |
|