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H7N0602AB |
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| Part Number | H7N0602AB |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | H7N0602AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0068-0200Z Rev.2.00 Oct.30.2003 www.DataSheet4U.com Features • Low on-resistance RDS(on) = 4.1 mΩ typ. • Low drive current • Avail... |
| Features |
• Low on-resistance RDS(on) = 4.1 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N0602AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 85 340 85 65 362 100 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel tempera... |
| Document |
 H7N0602AB Data Sheet
PDF 145.07KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | H7N0602LD |
Renesas Technology |
Silicon N-Channel MOSFET |
|
| 2 | H7N0602LM |
Renesas Technology |
Silicon N-Channel MOSFET |
|
| 3 | H7N0602LS |
Renesas Technology |
Silicon N-Channel MOSFET |
|
| 4 | H7N0603DL |
Renesas Technology |
Silicon N-Channel MOSFET |
|
| 5 | H7N0603DS |
Renesas Technology |
Silicon N-Channel MOSFET |
|