STU9NC90ZI |
Part Number | STU9NC90ZI |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such ar... |
Features |
OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
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STU8NC90Z/STU8NC90ZI
Safe Operating Area For Max220 Safe Operating Area For I-Max220
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Document |
STU9NC90ZI Data Sheet
PDF 350.04KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STU9NC90Z |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STU9NC80Z |
ST Microelectronics |
N-Channel MOSFET | |
3 | STU9NC80ZI |
ST Microelectronics |
N-CHANNEL 800V - 0.82ohm | |
4 | STU9N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STU9N65M2 |
STMicroelectronics |
N-channel Power MOSFET |