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DE150-201N09A |
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| Part Number | DE150-201N09A |
| Manufacturer | Directed Energy |
| Description | Directed Energy, Inc. An DE150-201N09A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS www.D... |
| Features |
SG1 SG2 GATE
= = = =
200 V 9.0 A 0.4 Ω 80W
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
PDHS
VDGR
VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJM Tstg TL Weight Symbol
DRAIN
Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C
SD1
SD2
1.6mm (0.063 in) from case for 10 s
300 2
• Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycl... |
| Document |
 DE150-201N09A Data Sheet
PDF 110.33KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | DE150-101N09A |
Directed Energy |
RF Power MOSFET |
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| 2 | DE150-102N02A |
Directed Energy |
RF Power MOSFET |
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Unitrode |
(DE104 - DE115) Signal Diode / Ultra Low Leakage |
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| 5 | DE10P3 |
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