Directed Energy, Inc. An DE150-102N02A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS www.DataSheet4U.com VDSS ID25 RDS(on) Maximum Ratings 1000 1000 ±20 ±30 1.5 9 1.5 6 3 >200 80 3.5 -55…+150 150 -55…+150 V V V V A A A mJ V/ns V/ns W W °C °C °C °C g.
SG1 SG2 GATE
= = = =
1000 V 1.5 A 11 Ω 80W
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
PDHS
VDGR
VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJM Tstg TL Weight Symbol
DRAIN
Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C
SD1
SD2
1.6mm (0.063 in) from case for 10 s
300 2
• Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DE150-101N09A |
Directed Energy |
RF Power MOSFET | |
2 | DE150-201N09A |
Directed Energy |
RF Power MOSFET | |
3 | DE150-501N04A |
Directed Energy |
RF Power MOSFET | |
4 | DE104 |
Unitrode |
(DE104 - DE115) Signal Diode / Ultra Low Leakage | |
5 | DE10P3 |
Shindengen Electric Mfg.Co.Ltd |
Schottky Rectifiers | |
6 | DE10PC3 |
Shindengen Electric Mfg.Co.Ltd |
Schottky Rectifiers (SBD) (30V 10A) | |
7 | DE10S3L |
Shindengen |
Schottky Barrier Diodes | |
8 | DE10SC3L |
Shindengen |
Schottky Barrier Diodes | |
9 | DE10SC4 |
Shindengen |
Schottky Barrier Diodes | |
10 | DE110 |
Unitrode |
(DE104 - DE115) Signal Diode / Ultra Low Leakage | |
11 | DE111 |
Unitrode |
(DE104 - DE115) Signal Diode / Ultra Low Leakage | |
12 | DE112 |
Unitrode |
(DE104 - DE115) Signal Diode / Ultra Low Leakage |