These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are w.
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• 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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D2-PAK
FQB Series
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I2-PAK
FQI Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB13N10 / FQI13N10 100 12.8 9.05 51.2 ± 25
(Note .
13N10 N-Channel 100-V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.092 at VGS = 10 V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 13N120-E2 |
UTC |
N-CHANNEL POWER MOSFET | |
2 | 13N120K5 |
STMicroelectronics |
N-Channel MOSFET | |
3 | 13N03LA |
Infineon Technologies |
IPD13N03LA | |
4 | 13N06L |
Fairchild Semiconductor |
FQB13N06L | |
5 | 13N40 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
6 | 13N40 |
UTC |
N-CHANNEL POWER MOSFET | |
7 | 13N40K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
8 | 13N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
9 | 13N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
10 | 13N50CF |
Fairchild Semiconductor |
N-Channel MOSFET | |
11 | 13N50DM2 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | 13N50H |
KIA |
N-CHANNEL MOSFET |