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HY27US08121M |
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| Part Number | HY27US08121M |
| Manufacturer | Hynix Semiconductor |
| Description | of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interface Using CE don’t care (Page37) 1) Delete Errata 2) C... |
| Features |
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
NAND INTERFACE
- x8 or x16 bus width. - Multiplexed Address/ Data
www.DataSheet4U.com - Pinout compatibility for all densities
STATUS REGISTER ELECTRONIC SIGNATURE
SUPPLY VOLTAGE
Sequential Row Read OPTION
: HY27USXX121M
- 3.3V device: VCC = 2.7 to 3.6V
- 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX121M
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support - Automatic Memory Download
Memory Cell Array
- 528Mbit = 528 Bytes x 32 Page... |
| Document |
 HY27US08121M Data Sheet
PDF 796.67KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HY27US08121A |
Hynix Semiconductor |
512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory |
|
| 2 | HY27US08121B |
Hynix Semiconductor |
512Mb NAND FLASH |
|
| 3 | HY27US08122B |
Hynix Semiconductor |
512Mb NAND FLASH |
|
| 4 | HY27US081G1M |
Hynix Semiconductor |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
|
| 5 | HY27US08281A |
Hynix Semiconductor |
(HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
|