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2SB1261-Z |
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| Part Number | 2SB1261-Z |
| Manufacturer | TRANSYS Electronics Limited |
| Description | Transys Electronics L I M I T E D TO-252 Plastic-Encapsulate Transistors 2SB1261-Z FEATURES Power dissipation www.DataSheet4U.com TRANSISTOR (PNP) TO-252 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTO... |
| Features |
Power dissipation
www.DataSheet4U.com
TRANSISTOR (PNP) TO-252
1. BASE
PCM:
2
W (Tamb=25℃)
2. COLLECTOR
Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
3. EMITTER
1
2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter s... |
| Document |
 2SB1261-Z Data Sheet
PDF 92.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1261-K |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SB1261-Z |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 3 | 2SB1261 |
LGE |
PNP Transistor |
|
| 4 | 2SB1261 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 5 | 2SB1261 |
GME |
PNP Epitaxial Planar Silicon Transistors |
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