PNP PNP Epitaxial Silicon Transistor R 2SB1261 MAIN CHARACTERISTICS IC VCEO PC -3A -60V 2W 、 APPLICATIONS Designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. :hFE=-100-400 :VCE(sat) ≤ 0.3 V (RoHS) Package FEATURES High hFE:hFE=-100-400 Low VCE(sat):VCE(sat) ≤ 0.3 V RoHS product TO-126 .
High hFE:hFE=-100-400
Low VCE(sat):VCE(sat) ≤ 0.3 V
RoHS product
TO-126
D-PAK
ORDER MESSAGE
- Halogen-Tu
be
2SB1261-M-B 2SB1261-R-B
Order codes
- - - -
Halogen Halogen-Re Halogen Halogen-R
Free-Tube
el
Free-Reel
eel
N/A
2SB1261-M-C
N/A
N/A
N/A
2SB1261-R-C
N/A
2SB1261-R-A
- Halogen Free-Reel
N/A N/A
Marking
2SB1261 2SB1261
Package
TO-126 DPAK
hFE Classification
M
hFE2
*
100-200
L 160-320
K 200-400
:202011C
1/4
R
2SB1261
ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted)
Parameter
— — —
Collector-Base Voltage (IE = 0) Collector- Emitter Voltage.
PNP Epitaxial Planar Silicon Transistors FEATURES z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-fre.
2SB1261 Transistor(PNP) 1. BASE 1 2. COLLECTOR 3. EMITTER TO-252-2L Features High hFE hFE=100 to 400 Low vCE(sat).
TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package. / Features hFE ,,。 Excellent hFE linearity, low .
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR (PNP) TO .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1260 |
Rohm |
Power Transistor | |
2 | 2SB1260 |
GME |
Power Transistor | |
3 | 2SB1260 |
HOTTECH |
PNP Transistor | |
4 | 2SB1260 |
WILLAS |
Plastic-Encapsulate Transistors | |
5 | 2SB1260 |
JinYu |
PNP Transistor | |
6 | 2SB1260 |
Kexin |
PNP Transistors | |
7 | 2SB1260 |
JCET |
PNP Transistor | |
8 | 2SB1260 |
SeCoS |
PNP Plastic Encapsulated Transistor | |
9 | 2SB1260 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
10 | 2SB1260 |
Weitron Technology |
PNP Plastic-Encapsulate Transistor | |
11 | 2SB1260 |
UTC |
POWER TRANSISTOR | |
12 | 2SB1260-HF |
Kexin |
PNP Transistors |