K8S6415ETB - Samsung semiconductor

K8S6415ETB (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory

is added January 09,2006 www.DataSheet4U.com 1.1 1 Revision 1.1 January, 2006 K8S6415ET(B)B FEATURES • Single Voltage, 1.7V to 1.95V for Read and Write operations • Organization - 4,194,304 x 16 bit ( Word Mode Only) • Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15 • Read While Program/Erase Operation • Multiple Bank Arc.

Features

• Single Voltage, 1.7V to 1.95V for Read and Write operations
• Organization - 4,194,304 x 16 bit ( Word Mode Only)
• Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15
• Read While Program/Erase Operation
• Multiple Bank Architecture - 16 Banks (4Mb Partition)
• OTP Block : Extra 256Byte block
• Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : www.DataSheet4U.com 90ns (54MHz) / 80ns (66MHz) - Synchronous Random Access Time : 88.5ns (54MHz) / 70ns (66MHz) - Burst Access Time : 14.5ns (54MHz) / 11ns (66MHz)
• Burst Length : - Continuous Linear Burst .