IPI06CN10NG |
Part Number | IPI06CN10NG |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | www.DataSheet4U.com IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R ... |
Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 100 6.2 100 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPB06CN10N G IPI06CN10N G IPP06CN10N G Package Marking PG-TO263-3 06CN10N PG-TO262-3 06CN10N PG-TO220-3 06CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions... |
Document |
IPI06CN10NG Data Sheet
PDF 560.00KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPI06CNE8NG |
Infineon Technologies |
Power-Transistor | |
2 | IPI06N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor | |
3 | IPI020N06N |
Infineon Technologies |
Power Transistor | |
4 | IPI023NE7N3G |
Infineon |
Power-Transistor | |
5 | IPI024N06N3 |
Infineon |
Power Transistor |