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SSM3K101TU |
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| Part Number | SSM3K101TU |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | www.DataSheet4U.com SSM3K101TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K101TU High Speed Switching Applications • • 1.8V drive Low on-resistance: Ron = 230mΩ (max) (@VGS = 1.8... |
| Features |
sign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 ) Note 2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Note:
UFM JEDEC JEITA TOSHIBA ― ― 2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current ... |
| Document |
 SSM3K101TU Data Sheet
PDF 177.79KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM3K102TU |
Toshiba Semiconductor |
High Speed Switching Applications |
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| 2 | SSM3K104TU |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | SSM3K105TU |
Toshiba Semiconductor |
Silicon N Channel MOS Type High Speed Switching Applications |
|
| 4 | SSM3K106TU |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | SSM3K107TU |
Toshiba Semiconductor |
Silicon N Channel MOS Type High-Speed Switching Applications |
|