The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted.
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Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive
PowerSO-10RF (formed lead)
Description
The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted i.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PD20015C |
ST Microelectronics |
Transistors | |
2 | PD20015S-E |
ST Microelectronics |
Transistors | |
3 | PD20010-E |
ST Microelectronics |
RF Power Transistor | |
4 | PD20012 |
Nihon Inter Electronics |
Diode | |
5 | PD20016 |
Nihon Inter Electronics |
Diode | |
6 | PD200 |
CONTELEC |
Singleturn Potentiometers | |
7 | PD200-1A-MB |
CONTELEC |
Singleturn Potentiometers | |
8 | PD200-1B |
CONTELEC |
Singleturn Potentiometers | |
9 | PD200-1B-MB |
CONTELEC |
Singleturn Potentiometers | |
10 | PD200-1C-MB |
CONTELEC |
Singleturn Potentiometers | |
11 | PD2008 |
Nihon Inter Electronics |
Diode | |
12 | PD200FG120 |
SanRex Corporation |
(PD200FG40 - PD200FG160) THYRISTOR/DIODE |