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MTD9N10E |
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| Part Number | MTD9N10E |
| Manufacturer | Motorola |
| Description | www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD9N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mod... |
| Features |
2500 Unit Tape & Reel, Add T4 Suffix to Part Number • Replaces MTD6N10 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°... |
| Document |
 MTD9N10E Data Sheet
PDF 207.99KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTD9N10E |
ON Semiconductor |
Power MOSFET |
|
| 2 | MTD907 |
Myson |
Ethernet Encoder/decoder and 10BaseT Transceiver |
|
| 3 | MTD9D0N06H8 |
Cystech Electonics |
N-Channel Enhancement Mode MOSFET |
|
| 4 | MTD-0208N |
Aeroflex |
Tunnel Diode Detectors |
|
| 5 | MTD-0218N |
Aeroflex |
Tunnel Diode Detectors |
|