LP1500SOT2231 |
Part Number | LP1500SOT2231 |
Manufacturer | Filtronic Compound Semiconductors |
Description | AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam ... |
Features |
LP1500SOT223
Low Noise, High Linearity Packaged PHEMT
• • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range GATE SOURCE SOURCE DRAIN (TOP VIEW) DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-sou... |
Document |
LP1500SOT2231 Data Sheet
PDF 69.84KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | LP1500SOT223 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT | |
2 | LP1500SOT2232 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT | |
3 | LP1500SOT2233 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT | |
4 | LP1500SOT89 |
Filtronic Compound Semiconductors |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT | |
5 | LP1500 |
Filtronic Compound Semiconductors |
1W POWER PHEMT |