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QL65F6SA |
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| Part Number | QL65F6SA |
| Manufacturer | Roithner Lasertechnik |
| Description | www.DataSheet4U.com QL65F6SA InGaAlP Laser Diode 2003 Rev 0 ♦OVERVIEW QL65F6SA is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a ... |
| Features |
- Visible Light Output: λp = 650 nm - Optical Power Output: 10 mW CW - Package Type : TO-18 (5.6 mmφ) - Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
www.DataSheet4U.com
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature
Symbols P V V Topr Tstg
Values 10 2 30 −10 ~ +60 −40 ~ +85
Unit mW V V °C °C
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C
Items
Optical Output Power Threshold Current Operating Current Operating Volt... |
| Document |
 QL65F6SA Data Sheet
PDF 76.10KB |
| Distributor | Stock | Price | Buy |
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