QL65F6S-A - QSI

QL65F6S-A LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL65F6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65F6S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 0 JAN. 2004 ♦OVERVIEW QL65F6S-.

Features

- Visible Light Output : λp = 650 nm - Optical Power Output : 10mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL65F6SA Fig. 2 QL65F6SB Fig. 3 QL65F6SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 12 2 30 −10 ~ +60 −40 ~ +85 Unit mW V V °C °C ♦EL.