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2SJ636 No. 2SJ636 µ µ µ 6.5 5.0 4 1.5 1.5 2.3 0.5 6.5 5.0 4 2.3 0.5 7.0 5.5 5.5 7.0 0.8 1.6 0.8 1.2 7.5 0.5 1 0.6 2 3 2.5 0.85 0.7 0.85 0.5 0.6 1.2 0 0.2 1 2 3 2.3 2.3 2.3 2.3 1.2 2SJ636 Ω Ω VDD= --50V VIN 0V --10V VIN PW=10µs D.C. 1% ID= --1.5A RL=33.3Ω D VOUT G P.G 50Ω 2SJ636 S ° ° ° 2SJ636 Ω ° Ω ° .
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SJ630 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications |
|
| 2 | 2SJ632 |
Sanyo Semicon Device |
P CHANNEL MOS SILICON TRANSISTOR |
|
| 3 | 2SJ633 |
Sanyo Semicon Device |
DC/DC Converter Applications |
|
| 4 | 2SJ634 |
Sanyo Semicon Device |
DC/ DC CONVERTER TRANSISTOR |
|
| 5 | 2SJ635 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
|
| 6 | 2SJ637 |
Sanyo Semicon Device |
DC/DC FOR CONVERTER |
|
| 7 | 2SJ600 |
NEC |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
|
| 8 | 2SJ600 |
Kexin |
MOSFET |
|
| 9 | 2SJ601 |
NEC |
P-Channel Power MOSFET |
|
| 10 | 2SJ601 |
Kexin |
MOSFET |
|
| 11 | 2SJ602 |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 12 | 2SJ602 |
Kexin |
MOSFET |
|