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MSC82306 |
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| Part Number | MSC82306 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The MSC82306 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overaly die geometry. This device is capable of withstanding 20:1 load VSWR at any phase ang... |
| Features |
TA RTH(j-c) Junction-Case Thermal Resistance* 9.0 °C/W
*Applies only to rated RF amplifier operation
October 1992
1/4
MSC82306
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER I CBO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCB = 22V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω IC = 400mA
44 3.5 44 — 30
— — — — —
— — — 0.5 300
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
POUT ηc GP COB
f = 2.3 GHz f = 2.3 GHz f = 2.3 GHz f = 1 MHz
PIN = 0.6 W PIN = 0.6 W PIN = 0.6 W VCB = 22 V
VCC = 22 V VCC = 22 V VCC = ... |
| Document |
 MSC82306 Data Sheet
PDF 80.95KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MSC82302 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
|
| 2 | MSC82304 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
|
| 3 | MSC82307 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
|
| 4 | MSC82001 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
|
| 5 | MSC82003 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
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