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MSC81111 |
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| Part Number | MSC81111 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The MSC81111 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable o... |
| Features |
Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 8.0 °C/W
*Applies only to rated RF amplifier operation
October 1992
1/5
MSC81111
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER I CBO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCB = 28V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω IC = 200mA
45 3.5 45 — 15
— — — — —
— — — 1.0 120
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
POUT ηc GP COB
f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1 MHz
PIN = 0.5 W PI... |
| Document |
 MSC81111 Data Sheet
PDF 126.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MSC81118 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
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| 2 | MSC8112 |
Freescale Semiconductor |
Dual Core Digital Signal Processor |
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| 3 | MSC8113 |
Freescale Semiconductor |
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| 4 | MSC81002 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
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| 5 | MSC81005 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
|