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30SPA0557 |
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| Part Number | 30SPA0557 |
| Manufacturer | Mimix Broadband |
| Description | Mimix Broadband's three stage 27.0-32.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +33 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device... |
| Features |
Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband's three stage 27.0-32.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +33 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via h... |
| Document |
 30SPA0557 Data Sheet
PDF 405.43KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 30SPA0553 |
Mimix Broadband |
GaAs MMIC Power Amplifier |
|
| 2 | 30SPA0536 |
Mimix Broadband |
GaAs MMIC Power Amplifier |
|
| 3 | 30S |
Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
|
| 4 | 30S1 |
Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
|
| 5 | 30S10 |
Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
|