Mimix Broadband's three stage 27.0-33.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high .
Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband's three stage 27.0-33.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 30SPA0553 |
Mimix Broadband |
GaAs MMIC Power Amplifier | |
2 | 30SPA0557 |
Mimix Broadband |
GaAs MMIC Power Amplifier | |
3 | 30S |
Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES | |
4 | 30S1 |
Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES | |
5 | 30S10 |
Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES | |
6 | 30S2 |
Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES | |
7 | 30S3 |
Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES | |
8 | 30S4 |
Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES | |
9 | 30S5 |
Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES | |
10 | 30S6 |
Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES | |
11 | 30S8 |
Microsemi Corporation |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES | |
12 | 30SC3ML |
Shindengen Electric |
DF30SC3ML |