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CEU51A3 |
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| Part Number | CEU51A3 |
| Manufacturer | CET |
| Description | CED51A3/CEU51A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 35A, RDS(ON) = 14mΩ(typ) @VGS = 10V. RDS(ON) = 21mΩ(typ) @VGS = 4.5V. Super high dense cell design for extremely low RD... |
| Features |
30V, 35A, RDS(ON) = 14mΩ(typ) @VGS = 10V. RDS(ON) = 21mΩ(typ) @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30
Units V V A A W W/ C C
±20
35 140 50 0.33 -55 to 175
Maximum Power Dissipation @ TC = 25 C - De... |
| Document |
 CEU51A3 Data Sheet
PDF 139.75KB |
| Distributor | Stock | Price | Buy |
|---|
